tm FFD20UP20S 20 a, 200 v, ultrafast diode ?2009 fairchild semiconductor corporation FFD20UP20S rev. a www.fairchildsemi.com 1 FFD20UP20S features ? ultrafast recovery, t rr = 45 ns (@ i f = 20 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage, v rrm = 200 v ? avalanche energy rated applications ? power switching circuits ? output rectifiers ? freewheeling diodes ? switching mode power supply absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 200 v i f(av) average rectified forward current @ t c = 123 o c 20 a i fsm non-repetitive peak surge current 60hz single half-sine wave 200 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 1.9 o c/w device marking device package reel size tape width quantity f20up20s FFD20UP20S d-pak 13 dia - 2500 1, 2 anode 3. cathode (flange) 1 3 2 1 2 3 june 2009 ? rohs compliant 20 a, 200 v, ultrafast diode the FFD20UP20S is an ultrafas t diode with low forward voltage drop and rugged uis c apability . this devic e is intended for use as freewheeling and clamping diodes in a variety of switc hing power supplies and other power switc hing applications. it is specially suited for us e in switc hing power supplies and industrial applicationa as welder and ups application.
FFD20UP20S 20 a, 200 v, ultrafast diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted * pulse test: pulse width = 300 s, duty cycle = 2% test circuit and waveforms symbol parameter min. typ. max. unit v f * maximum instantaneous forward voltage i f = 20 a i f = 20 a i f = 30 a t c = 25 o c t c = 100 o c t c = 25 o c - - - 0.94 0.84 1.00 1.15 1.05 - v i r * maximum instantaneous reverse current @ rated v r t c = 25 o c t c = 100 o c - - - - 100 500 a t rr reverse recovery time (i f = 20 a, di/dt = 200 a/s) -2 24 5n s w avl avalanche energy ( l = 40 mh) 20 - - mj * ?2009 fairchild semiconductor corporation FFD20UP20S rev. a
FFD20UP20S 20 a, 200 v, ultrafast diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt fi gure 6. forward current derating curve 0.00.30.60.91.21.5 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 10 50 100 150 200 1e-4 0.001 0.01 0.1 1 10 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ a ] reverse voltage, v r [v] 100 200 300 400 500 10 20 30 40 t c = 125 o c i f = 20a t c = 25 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 0.1 1 10 100 10 100 1000 capacitances , cj [pf] typical capacitance at 0v = 335 pf reverse voltage, v r [v] 100 200 300 400 500 0 2 4 6 8 t c = 25 o c i f = 20a t c = 125 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 20 40 60 80 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2009 fairchild semiconductor corporation FFD20UP20S rev. a
FFD20UP20S 20 a, 200 v, ultrafast diode www.fairchildsemi.com 4 mechanical dimensions d-pak dimensions in millimeters ?2009 fairchild semiconductor corporation FFD20UP20S rev. a
FFD20UP20S 20 a, 200 v, ultrafast diode www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FFD20UP20S rev. a
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